UMC's 28nm process technology is developed for applications that require the highest performance process technology. In October 2008, we were the first foundry to deliver fully functional 28nm SRAM chips, and have proven in silicon the high-K/metal solution that will be implemented on this technology node. UMC's 28nm progress was also recognized by the industry with the foundry being selected to present at the 2009 IEDM on a hybrid high-K/metal gate approach. Currently, we are already working with several customers to adopt their products on UMC's 28nm technology.

28nm Technology for Broad Applications
UMC incorporates a dual approach for its 28nm technology to address different market applications. Conventional silicon gate/silicon-oxy-nitride gate oxide technology is used for its LP (low power) process, which is ideal for portable applications such as mobile phone ICs. UMC's second option will utilize a high-k/metal gate stack for speed-intensive products such as graphic, application processor, and high-speed communication ICs.

L28 Logic/MM Devices