|
EFA equipment
|
Equipment
|
Resolution
/ Detection Limit
|
Field
of Application
|
|
Photo
Emission Microscope (PEM)
|
1nA, Wavelength
= 4000 ~9000A
|
Latch-up,
Gate Oxide Breakdown, Hot carrier, Leakage, Isb
|
|
Backside
Photo Emission Microscope (Backside PEM, MCT)
|
1nA, Wavelength
= 4000 ~11000A
|
Multi-level
Metals, Latch-Up, Gate Oxide Breakdown, Hot carrier,
Leakage, Isb
|
|
IR-OBIRCH
High Power IR-OBIRCH
|
1.11mA@10mV
(11.1uW)
|
Detect
Leakage Path and High Resistance Site
|
|
Liquid
Crystal Detection (LCD)
|
60uA@5V
|
Latch-up,
Junction Leakage, Short, ESD Damage
|
|
Semiconductor
Electrical Parameter Measurement (HP4156)
|
1pA
|
Semiconductor
Parameter Measurement
|
|
Laser
Cutter
|
1um
|
Circuit
Isolation, Failure Site Marker
|
|
Memory
Benchtop Tester (MOSAID)
|
10nS,
64M
|
Memory
Bit Map and Function Test
|
|
Logic
Tester
|
100MHz
/ 160pin / 128K memory
|
Provide
Test Pattern
|
|
PFA equipment
|
Equipment
|
Resolution
/ Detection Limit
|
Field
of Application
|
|
Scanning
Electron Microscopes (SEM)
|
15A@30KV
|
Structure
Observation / EDS Analysis
|
|
Transmission
Electron Microscopes (TEM)
|
2A / 10A
|
Structure
Observation / EDS /EELS Analysis
|
|
Focus
Ion Beam (FIB)
|
70A(I),
50A(E) / 500A
|
Auto TEM
cutting / Voltage Contrast Via / Contact Resistance
Abnormal/Circuit Repair
|
|
Scanning
Auger Microscopes (SAM)
|
150A
|
Composition
/ Contamination / Particle Analysis
|
|
Secondary
Ion Mass Spectrometry (SIMS)
|
10~20nm.
lower energy: 1nm
|
Element
Analysis Element Analysis (lower energy)
|
|
Spreading
Resistance Probe (SRP)
|
Depth
resolution 12.5nm
|
Doping
(Carrier) Analysis
|
|
Scanning
Probe Microscope (SPM)
|
2A/ 200A
|
Roughness
Analysis/ Junction/ Well analysis
|
|
Auto Decapsulation
System
|
|
Decapsulator
for BGA, QFP, ....
|
