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For Immediate Release
1T-SRAM™
Memory Technology Available on UMC's Deep Submicron Logic
Processes
Ultra-dense memory technology available to UMC's foundry customers
SUNNYVALE,
CA (April 25, 2000) – Today MoSys, Inc. and UMC announced
a long-term agreement to provide UMC's foundry customers access
to MoSys' ultra-dense 1T-SRAM embedded memories. Both companies
have cooperated on the development, porting and silicon-verification
of MoSys'1T-SRAM technology which is available on UMC's deep submicron
logic processes.
"UMC
continues to set the technology pace; planning to ship one-quarter
million 0.18-micron wafers this year and production qualifying
0.15-micron technology this month. We are also expanding 0.18/0.15-micron
capacity, aggressively ramping the newest fleet of fabs in the industry,"
said Dr. Jim Ballingall, vice president of worldwide marketing at
UMC. "MoSys' 1T-SRAM technology provides our system-on-chip
customers with the capability to economically integrate megabytes
of high-performance memory on these industry-leading processes,
addressing a density segment between the typical densities of our
6T-SRAM and embedded DRAM technologies."
Today's
announcement extends the ongoing cooperation between the companies
under UMC's Silicon Shuttle™ and Gold-IP™
programs in order to accelerate the availability of embedded 1T-SRAM
memories. Now UMC's customers can rapidly obtain 1T-SRAM macros
customized to their requirements and optimized for UMC's logic processes.
With the 1T-SRAM technology, targeted to UMC' processes, UMC's customers
have a fast, time-to-market approach for embedding high-density
memories into their SoCs, complementing the array of silicon-proven
analog and digital cores available in the UMC Gold IP ™
catalog.
"MoSys'
1T-SRAM embedded memory is building tremendous success among the
fabless semiconductor companies," noted Mark-Eric Jones, vice president
and general manager of intellectual property at MoSys, Inc. "We
are excited to extend our solutions, through this partnership, to
UMC's customers as we offer MoSys' unique memory architecture on
UMC's latest processes."
ABOUT
1T-SRAM
Available
in densities up to 128Mbits, MoSys' patented 1T-SRAM technology
uses a single transistor cell to achieve its exceptional density
while maintaining the refresh-free interface and low latency random
memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM memories allow designers to get beyond
the density limits of six-transistor SRAMs; it also reduces much
of the circuit complexity and extra cost associated with using embedded
DRAM. In addition to the exceptional performance and density, this
technology offers dramatic power consumption savings by using under
a quarter of the power of traditional SRAM memories. 1T-SRAM technology
is volume production proven in millions of MoSys' discrete memory
devices.
NOTE CONCERNING FORWARD-LOOKING STATEMENTS
Some
of the statements in the foregoing announcement are forward looking
within the meaning of the U.S. Federal Securities laws, including
statements about future outsourcing, wafer capacity, technologies,
business relationships and market conditions. Investors are cautioned
that actual events and results could differ materially from these
statements as a result of a variety of factors, including conditions
in the overall semiconductor market and economy; acceptance and
demand for products; and technological and development risks.
ABOUT
MOSYS
MoSys,
Inc. is the leading semiconductor technology company specializing
in innovative, high performance, random access memories based on
its patented 1T-SRAM architecture. Founded in 1991, the company
develops innovative memory technology for licensing to semiconductor
and systems companies. MoSys also uses this technology to produce
its own memory products. The company's unique memory architecture
has been proven in the volume production of over 30 million memory
devices. Licensees that are adopting 1T-SRAM technology include
tier one electronics, semiconductor and foundry companies.
The company is headquartered at 1020 Stewart Drive, Sunnyvale, California,
94086. More information on MoSys is available at http://www.mosys.com.
Note for Editors:
1T-SRAM is a trademark of MoSys, Inc. All other trademarks
or registered trademarks are the property of their respective owners.
ASICplus and Gold IP are
trademarks of UMC.
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