美國MOSYS公司的1T-SRAM-R記憶體成功通過聯華電子0.13微米製程驗證

聯電與先進高密度SoC嵌入式記憶體供應商MoSys公司今(13)日共同宣佈：MoSys公司的1T-SRAM-R技術﹝含Transparent Error CorrectionO ﹞成功通過聯華電子0.13微米製程驗證。MoSys公司是高密度SoC嵌入式記憶體業中的領導者。MoSys的客戶可因此擁有在聯電的0.18微米、0.15微米及0.13微米製程中驗證成功的1T-SRAM 記憶體技術。

MoSys公司副總經理暨Intellectual Property部門總經理Mark-Eric Jones先生表示：聯電為全球晶圓專工業的龍頭之一，我們很高興能在聯電最新的製程上驗證成功。此次驗證的成功顯示了MoSys 與聯電雙方緊密的合作關係。1T-SRAM-R 新技術採用聯電0.13微米製程，提供雙方客戶高良率及可信賴性的高密度記憶體，同時大幅降低雷射修補(laser repair)及排除soft error rates。

聯電副總經理李俊德博士表示：MoSys將持續提供符合市場廣泛需求的 1T-SRAM。由於MoSys的智慧財產 (IP)已驗證過，設計工程師在0.13微米SoC設計中可有信心的使用1T-SRAM-R 的技術。且因記憶體晶片約佔SoC晶片總面積之50% ，所以記憶體之晶片設計成功與否將扮演著非常重要的角色。

MoSys 的0.13微米1T-SRAM-R技術預定二月中旬在聯電的線上設計資源服務系統"IP Master"中提供給客戶使用 ，聯電也將在2003年第二季提供依客戶需求的1T-SRAM產品。

關於1T-SRAM技術
MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory technology， demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applications.

關於MoSys公司
Founded in 1991， MoSys (NASDAQ： MOSY)， develops， licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density， low power consumption， high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar， refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition， this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology， contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technologies are in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive， Sunnyvale， California 94085. More information is available on MoSys' website at http：//www.mosys.com.

1T-SRAMR is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade， product， or service names referenced in this release may be trademarks or registered trademarks of their respective holders.

新聞聯絡:
聯華電子
顏勝德 (Sandy Yen)
(02)2700 6999 ext. 6968
sandy_yen@umc.com