|
1T-SRAM™ Memory
Technology Available on UMC's Deep Submicron Logic Processes
Ultra-dense memory technology available to UMC's
foundry customers
SUNNYVALE, CA (April 25, 2000) – Today MoSys,
Inc. and UMC announced a long-term agreement to provide UMC's foundry
customers access to MoSys' ultra-dense 1T-SRAM embedded memories.
Both companies have cooperated on the development, porting and silicon-verification
of MoSys'1T-SRAM technology which is available on UMC's deep submicron
logic processes.
"UMC continues to set the technology pace; planning
to ship one-quarter million 0.18-micron wafers this year and
production qualifying 0.15-micron technology this month. We are
also expanding 0.18/0.15-micron capacity, aggressively ramping the
newest fleet of fabs in the industry," said Dr. Jim Ballingall,
vice president of worldwide marketing at UMC. "MoSys' 1T-SRAM
technology provides our system-on-chip customers with the capability
to economically integrate megabytes of high-performance memory on
these industry-leading processes, addressing a density segment between
the typical densities of our 6T-SRAM and embedded DRAM technologies."
Today's announcement extends the ongoing cooperation
between the companies under UMC's Silicon Shuttle™
and Gold-IP™ programs in order to accelerate the
availability of embedded 1T-SRAM memories. Now UMC's customers can
rapidly obtain 1T-SRAM macros customized to their requirements and
optimized for UMC's logic processes. With the 1T-SRAM technology,
targeted to UMC' processes, UMC's customers have a fast, time-to-market
approach for embedding high-density memories into their SoCs, complementing
the array of silicon-proven analog and digital cores available in
the UMC Gold IP ™ catalog.
"MoSys' 1T-SRAM embedded memory is building tremendous
success among the fabless semiconductor companies," noted Mark-Eric
Jones, vice president and general manager of intellectual property
at MoSys, Inc. "We are excited to extend our solutions, through
this partnership, to UMC's customers as we offer MoSys' unique memory
architecture on UMC's latest processes."
ABOUT 1T-SRAM
Available in densities up to 128Mbits, MoSys' patented 1T-SRAM
technology uses a single transistor cell to achieve its exceptional
density while maintaining the refresh-free interface and low latency
random memory access cycle time associated with traditional six-transistor
SRAM cells. Embedded 1T-SRAM memories allow designers to get beyond
the density limits of six-transistor SRAMs; it also reduces much
of the circuit complexity and extra cost associated with using embedded
DRAM. In addition to the exceptional performance and density, this
technology offers dramatic power consumption savings by using under
a quarter of the power of traditional SRAM memories. 1T-SRAM technology
is volume production proven in millions of MoSys' discrete memory
devices.
NOTE CONCERNING FORWARD-LOOKING STATEMENTS
Some of the statements in the foregoing announcement
are forward looking within the meaning of the U.S. Federal Securities
laws, including statements about future outsourcing, wafer capacity,
technologies, business relationships and market conditions. Investors
are cautioned that actual events and results could differ materially
from these statements as a result of a variety of factors, including
conditions in the overall semiconductor market and economy; acceptance
and demand for products; and technological and development risks.
ABOUT MOSYS
MoSys, Inc. is the leading semiconductor technology
company specializing in innovative, high performance, random access
memories based on its patented 1T-SRAM architecture. Founded
in 1991, the company develops innovative memory technology for licensing
to semiconductor and systems companies. MoSys also uses this technology
to produce its own memory products. The company's unique memory
architecture has been proven in the volume production of over 30
million memory devices. Licensees that are adopting 1T-SRAM
technology include tier one electronics, semiconductor and foundry
companies. The company is headquartered at 1020 Stewart Drive,
Sunnyvale, California, 94086. More information on MoSys is
available at http://www.mosys.com.
Note for Editors:
1T-SRAM is a trademark of
MoSys, Inc. All other trademarks or registered trademarks
are the property of their respective owners. ASICplus
and Gold IP are trademarks of UMC.
|
