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Architecture Knowledge
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    Process Technologies
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    28 nm
    40 nm
    65 nm
    90 nm
    0.13 um
    0.15 um
    0.18 um
    0.25 um and above
    Mixed Mode/
RFCMOS
    CMOS Image
Sensor
    High Voltage
    World Class Manufacturing
    Test Services/
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    Design Support Manuals
 
 
CMOS Image Sensor Technology



 

UMC's enhanced CMOS image sensor process is based on our generic mixed-mode process. The unique proprietary technology addresses the needs of today's most sophisticated camera-on-a-chip designers that produce chips for high-end, still life and video digital cameras, and scanners. Because of its lower than average dark current level, UMC's sensor process allows image sensors designed in its process to detect light at lower light conditions. The result is image quality that is superior to any other foundry CMOS technology. UMC's CMOS image sensor process is available from 0.5um down to 0.11um technologies to power customer designs ranging from VGA applications to megabit resolution products.

Advanced CIS Technology Features
   
Ultra-PD (buried PD) architecture
4um or 7um P-epi on P+ substrate
Shallow Trench Isolation
Retrograded twin well (Deep N-well is optional)
Dual gate oxides
Poly gate with CoSi2
CoSi2 S/D
3~4 Al metal layers with thin backend process (110nm):
  0.28um pitch for M1 and mid Metals
  1.7um film stack (from photodiode to color filter)
Color Filter (CF) / Microlens (uL) in-house capability
Technologies for Broad Applications

 
0.13um/0.11um CIS Device Family

 
Color Filter & Microlens

 
For the technologies of 0.18um and beyond
Please contact your account manager of UMC for further details.
For new customers, please contact: sales@umc.com