聯電與先進高密度 SoC 嵌入式記憶體供應商 MoSys 公司今 (13) 日共同宣佈：MoSys 公司的 1T-SRAM-R 技術﹝含 Transparent Error CorrectionO﹞成功通過聯華電子 0.13 微米製程驗證。MoSys 公司是高密度 SoC 嵌入式記憶體業中的領導者。MoSys 的客戶可因此擁有在聯電的 0.18 微米、0.15 微米及 0.13 微米製程中驗證成功的 1T-SRAM 記憶體技術。

MoSys 公司副總經理暨 Intellectual Property 部門總經理 Mark-Eric Jones 先生表示：聯電為全球晶圓專工業的龍頭之一，我們很高興能在聯電最新的製程上驗證成功。此次驗證的成功顯示了 MoSys 與聯電雙方緊密的合作關係。1T-SRAM-R 新技術採用聯電 0.13 微米製程，提供雙方客戶高良率及可信賴性的高密度記憶體，同時大幅降低雷射修補 (laser repair) 及排除 soft error rates。

聯電副總經理李俊德博士表示：MoSys 將持續提供符合市場廣泛需求的 1T-SRAM。由於MoSys 的智慧財產 (IP) 已驗證過，設計工程師在 0.13 微米 SoC 設計中可有信心的使用 1T-SRAM-R 的技術。且因記憶體晶片約佔 SoC 晶片總面積之 50% ，所以記憶體之晶片設計成功與否將扮演著非常重要的角色。

MoSys 的 0.13 微米 1T-SRAM-R 技術預定二月中旬在聯電的線上設計資源服務系統 "IP Master" 中提供給客戶使用 ，聯電也將在 2003 年第二季提供依客戶需求的 1T-SRAM 產品。

MoSys' licensees have shipped more than 50 million chips incorporating 1T-SRAM embedded memory technology， demonstrating the excellent manufacturability of the technology in a wide range of silicon processes and applicati

Founded in 1991， MoSys (NASDAQ： MOSY)， develops， licenses and markets innovative memory technologies for semiconductors. MoSys' patented 1T-SRAM technologies offer a combination of high density， low power consumption， high speed and low cost unmatched by other available memory technologies. The single transistor bit cell used in 1T-SRAM technology results in the technology achieving much higher density than traditional four or six transistor SRAMs while using the same standard logic manufacturing processes. 1T-SRAM technologies also offer the familiar， refresh-free interface and high performance for random address access cycles associated with traditional SRAMs. In addition， this technology can reduce operating power consumption by a factor of four compared with traditional SRAM technology， contributing to making it an ideal technology for embedding large memories in System on Chip (SoC) designs. 1T-SRAM technologies are in volume production both in SoC products at MoSys' licensees as well as in MoSys' standalone memories. MoSys is headquartered at 1020 Stewart Drive， Sunnyvale， California 94085. More information is available on MoSys' website at http：//www.mosys.com.

1T-SRAMR is a MoSys trademark registered in the U.S. Patent and Trademark Office. All other trade， product， or service names referenced in this release may be trademarks or registered trademarks of their respective holders.