Value and Performance Driven 28nm Technology
UMC's 28nm process technology is developed for applications that require the highest performance process technology. In October 2008, we were the first foundry to deliver fully functional 28nm SRAM chips, and have proven in customer silicon the High-k/metal gate solution used for this technology node. UMC's 28nm progress was also recognized by the industry with the foundry being selected to present at the 2009 IEDM on a hybrid High-k/metal gate approach. Currently, we are already working with several customers to adopt their products on UMC's 28nm technology.
Offering and Benefits
UMC's 28nm Low Power (LP) and 28nm High Performance Low Power (HLP) provide a natural migration from 40nm with easy adoption, fast-time-to-markst, and a very favorable performance / cost ratio. UMC's 28nm High Performance Mobile (HPM) High-k / metal gate process uses the industry-mainstream Gate-Last approach.28LP - with conventional Poly/SiON
A low power, low leakage Poly/SioN solution that supports multiple foundry sourcing, improve speed by 20% over UMC's 40nm Low Power (LP) process at the same gate leakage.28HLP - with enhanced Poly/SiON
The most cost-effective Poly/SiON solution that delivers vastly improved performance and power consumption for customers demanding more speed for their particular application. Improves speed by 20% over other 28nm Poly/SiON industry offerings.28HPM - with High-k/metal gate stack
The lowest leak solution with ultra performance that supports broad device options for increased flexibility and performance requirements, targeting a wide range of products such as application processor, cellular baseband, WLAN, Tablet, FPGA and Networking ICs. The High-k-/metal gate stack and abundant options for device voltages, menory bit-cells and underdrive/overdrive capabilities help SoC designers realize record performance and battery life.
UMC's rich 28nm technology platform and dual process approach satisfies the rigorous requirements of all major market applications.
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