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    0.13 um
    0.15 um
    0.18 um
    0.25 um and above
    Mixed Mode/
RFCMOS
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0.13um

UMC's 0.13 micron process is the industry's most advanced system-on-chip platform available, employing the most advanced materials and up to 8 layers of copper interconnects to enable an unmatched gate density of 220K gates/mm. UMC's embedded memory technologies include the industry's most competitive eSRAM bitcell, 1T SRAM, and embedded EEPROM. Comprehensive IP / libraries and design support complete this total platform offering.

0.13um Brochure (pdf, 251kb)

Key Features of UMC 0.13-micron technology

  • Shallow trench isolation
  • Retrograde twin well (Triple well option)
  • Dual gate oxides
  • Dual poly gate with CoSi2
  • Up to 1P8M Cu with FSG dielectric
  • 2.28 SRAM bit cell
  • e-Fuse option
  • Wirebond / Flipchip packaging
  • BOAC (Bonding Over Active Circuit)
UMC's 0.13um technology features a wide range of device offerings that are each optimized for different product applications, from high speed to low leakage. In addition to these core offerings, RFCMOS/Mixed mode technologies are available along with Fusion, a design option that allows both high speed and low leakage transistors to be combined on a single chip.

 

0.13um Devices Offering