UMC's 28nm process technology is developed for applications that require the highest performance process technology. In October 2008, we were the first foundry to deliver fully functional 28nm SRAM chips, and have proven in silicon the High-k/metal gate solution that will be implemented on this technology node. UMC's 28nm progress was also recognized by the industry with the foundry being selected to present at the 2009 IEDM on a hybrid High-k/metal gate approach. Currently, we are already working with several customers to adopt their products on UMC's 28nm technology.

28nm Brochure (pdf, 339kb)

28nm Technology Offering
UMC's 28nm Low Power (LPT) process implements conventional Poly/SiON to improve speed by 20% over our 40LP process at the same gate leakage. Customers demanding more speed for their particular application can utilize UMC High Performance Low Power (HLP) solution, which uses an enhanced POLY/SiON process to further improve speed by 20% over 28LPT. Both technologies provide a natural migration path from 40nm with easy design adoption, fast time-to-market, and a very favorable performance/cost ratio.

To realize ultra performance with the lowest leakage, UMC implements a High-k/metal gate stack for its 28HPM (High Performance Mobile) process. Our 28HPM technology supports broad device options for increased flexibility and performance requirements, targeting a wide range of products such as application processor, cellular baseband, WLAN, Tablet, FPGA and Networking ICs. UMC's High-k/metal gate process uses the industry-mainstream Gate-Last approach.

UMC's Value Driven 28nm Technology
UMC's 28nm process delivers twice the gate density of 40nm and features an SRAM shrink size approximately 50 percent. Platform features and benefits:

28nm Technology for Broad Applications:
UMC's rich 28nm technology platform and dual process approach satisfies the rigorous requirements of all major market applications.