TSUNNYVALE, CA (April 25, 2000) - Today MoSys, Inc. and UMC announced a long-term agreement to provide UMC's foundry customers access to MoSys' ultra-dense 1T-SRAM embedded memories. Both companies have cooperated on the development, porting and silicon-verification of MoSys'1T-SRAM technology which is available on UMC's deep submicron logic processes.

"UMC continues to set the technology pace; planning to ship one-quarter million 0.18-micron wafers this year and production qualifying 0.15-micron technology this month. We are also expanding 0.18/0.15-micron capacity, aggressively ramping the newest fleet of fabs in the industry," said Dr. Jim Ballingall, vice president of worldwide marketing at UMC. "MoSys' 1T-SRAM technology provides our system-on-chip customers with the capability to economically integrate megabytes of high-performance memory on these industry-leading processes, addressing a density segment between the typical densities of our 6T-SRAM and embedded DRAM technologies."

Today's announcement extends the ongoing cooperation between the companies under UMC's Silicon Shuttle™ and Gold-IP™ programs in order to accelerate the availability of embedded 1T-SRAM memories. Now UMC's customers can rapidly obtain 1T-SRAM macros customized to their requirements and optimized for UMC's logic processes. With the 1T-SRAM technology, targeted to UMC' processes, UMC's customers have a fast, time-to-market approach for embedding high-density memories into their SoCs, complementing the array of silicon-proven analog and digital cores available in the UMC Gold IP ™ catalog.

"MoSys' 1T-SRAM embedded memory is building tremendous success among the fabless semiconductor companies," noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc. "We are excited to extend our solutions, through this partnership, to UMC's customers as we offer MoSys' unique memory architecture on UMC's latest processes."

Available in densities up to 128Mbits, MoSys' patented 1T-SRAM technology uses a single transistor cell to achieve its exceptional density while maintaining the refresh-free interface and low latency random memory access cycle time associated with traditional six-transistor SRAM cells. Embedded 1T-SRAM memories allow designers to get beyond the density limits of six-transistor SRAMs; it also reduces much of the circuit complexity and extra cost associated with using embedded DRAM. In addition to the exceptional performance and density, this technology offers dramatic power consumption savings by using under a quarter of the power of traditional SRAM memories. 1T-SRAM technology is volume production proven in millions of MoSys' discrete memory devices.

NOTE CONCERNING FORWARD-LOOKING STATEMENTS
Some of the statements in the foregoing announcement are forward looking within the meaning of the U.S. Federal Securities laws, including statements about future outsourcing, wafer capacity, technologies, business relationships and market conditions. Investors are cautioned that actual events and results could differ materially from these statements as a result of a variety of factors, including conditions in the overall semiconductor market and economy; acceptance and demand for products; and technological and development risks.

AvaiMoSys, Inc. is the leading semiconductor technology company specializing in innovative, high performance, random access memories based on its patented 1T-SRAM architecture. Founded in 1991, the company develops innovative memory technology for licensing to semiconductor and systems companies. MoSys also uses this technology to produce its own memory products. The company's unique memory architecture has been proven in the volume production of over 30 million memory devices. Licensees that are adopting 1T-SRAM technology include tier one electronics, semiconductor and foundry companies. The company is headquartered at 1020 Stewart Drive, Sunnyvale, California, 94086. More information on MoSys is available at http://www.mosys.com.

Note for Editors:
1T-SRAM is a trademark of MoSys, Inc. All other trademarks or registered trademarks are the property of their respective owners. ASICplus and Gold IP are trademarks of UMC.