SUNNYVALE, CA (April 25, 2000) - Today MoSys, Inc. and UMC announced a long-term agreement to provide UMC's foundry customers access to MoSys' ultra-dense 1T-SRAM embedded memories. Both companies have cooperated on the development, porting and silicon-verification of MoSys'1T-SRAM technology which is available on UMC's deep submicron logic processes.
"UMC continues to set the technology pace; planning to ship one-quarter million 0.18-micron wafers this year and production qualifying 0.15-micron technology this month. We are also expanding 0.18/0.15-micron capacity, aggressively ramping the newest fleet of fabs in the industry," said Dr. Jim Ballingall, vice president of worldwide marketing at UMC. "MoSys' 1T-SRAM technology provides our system-on-chip customers with the capability to economically integrate megabytes of high-performance memory on these industry-leading processes, addressing a density segment between the typical densities of our 6T-SRAM and embedded DRAM technologies."
Today's announcement extends the ongoing cooperation between the companies under UMC's Silicon Shuttle™ and Gold-IP™ programs in order to accelerate the availability of embedded 1T-SRAM memories. Now UMC's customers can rapidly obtain 1T-SRAM macros customized to their requirements and optimized for UMC's logic processes. With the 1T-SRAM technology, targeted to UMC' processes, UMC's customers have a fast, time-to-market approach for embedding high-density memories into their SoCs, complementing the array of silicon-proven analog and digital cores available in the UMC Gold IP ™ catalog.
"MoSys' 1T-SRAM embedded memory is building tremendous success among the fabless semiconductor companies," noted Mark-Eric Jones, vice president and general manager of intellectual property at MoSys, Inc. "We are excited to extend our solutions, through this partnership, to UMC's customers as we offer MoSys' unique memory architecture on UMC's latest processes."
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