スペシャルティテクノロジー

UMC’s Bipolar-CMOS-DMOS (BCD) technology supports power IC designs with operating voltages up to 200V, enabling exceptional energy efficiency and high integration of analog and digital circuitry, power devices, and embedded non-volatile memories (eNVM).

UMC’s BCD technology nodes range from 0.5μm to 55nm, with device offerings that include low-voltage MOS, high-voltage DMOS, mixed-signal and analog devices, passive devices, and embedded non-volatile memories covering all electronic applications including consumer, computing, communication, industrial and automotive.

UMC’s embedded high-voltage (eHV) technology offers a highly competitive portfolio of high-voltage processes seamlessly integrated with logic CMOS. With a broad range of robust device options, efficient power management, and scalable design flexibility, UMC’s eHV solutions enable advanced display driver ICs across multiple technology nodes while delivering optimized performance and reliability.

These capabilities enable diverse display platforms, from LCD and OLED panels to emerging micro displays such as Micro LED and micro OLED, powering products from mobile and wearable devices to large area TVs, monitors, and automotive/AR VR displays.

UMC’s embedded Non-Volatile Memory (eNVM) portfolio focuses on MRAM, RRAM, and eFlash technologies for a broad range of emerging applications. These solutions provide reliable on-chip storage for code, configuration data, and system information, while retaining data without power.

Target applications include automotive and general-purpose MCUs, industrial and IoT devices, edge-AI systems, smart cards, and SIM cards. Together, MRAM, RRAM, and eFlash enable flexible memory solutions for next-generation products that demand reliability, performance, endurance, and low power consumption.

UMC’s RF Technology enables high-performance wireless connectivity through advanced semiconductor platforms optimized for radio frequency applications. Leveraging comprehensive RFCMOS and mmWave solutions, UMC delivers high integration, excellent RF performance, and optimized power efficiency. Backed by proven manufacturing expertise and a complete design enablement ecosystem, these platforms help customers accelerate product development and achieve faster time-to-market.

Applications span 5G mobile devices, Wi-Fi 6/7, IoT, automotive connectivity, satellite communications, RF front-end modules, small cells, FWA/CPE equipment, and emerging mmWave applications.

UMC’s RF SOI (RF Silicon-on-Insulator) process platform enables highly integrated RF front-end components with excellent isolation performance and low-loss switching capabilities. Built on an optimized SOI substrate, the platform delivers ultra-low harmonic distortion, excellent linearity, and competitive RF switch performance, thereby enabling greater energy efficiency. It also provides robust low-noise amplifier (LNA) transistor performance and ample design margin.

RFSOI platforms targets 4G/LTE and 5G smartphones and connectivity modules, supporting antenna switches, antenna tuners, low-noise amplifiers (LNAs), and related FEM functions. The technology also fits Wi-Fi, IoT, and automotive telematics, offering stable performance across bands and production-ready reliability for high-volume manufacturing.