As demand for AI, high-performance computing (HPC), and advanced memory applications continues to grow, chip integration must deliver higher bandwidth and density while accommodating more dies within a limited package footprint. UMC’s 3D IC technology uses wafer-to-wafer (W2W) hybrid bonding to directly bond stacked wafers, creating thinner, higher-density vertical interconnects. For compute-intensive applications, wafer-to-wafer stacking can substantially increase data-transfer bandwidth.
Compared with conventional micro-bump stacking, hybrid bonding reduces the height occupied by interconnects between dies and increases vertical interconnect density, helping integrate more dies within a limited package height. This is particularly beneficial for high-bandwidth memory (HBM) and high-bandwidth flash (HBF), where it can help ease package-height constraints caused by the cumulative height of micro-bump interconnects in multi-die stacks.
UMC’s 3D IC connects multiple layers through through-silicon vias (TSVs) and supports face-to-back and back-to-back stacking configurations. Instead of relying on micro bumps, hybrid bonding joins copper pads across an oxide interface, reducing the stand-off height between wafers. This lower profile makes it possible to fit more layers within a given stack height, helping improve area density. The smaller pad-to-pad pitch also supports higher input/output (I/O) density, which is critical for there applications. UMC is also developing backside thinning and redistribution layer (RDL) technologies to provide flexibility in package and interconnect design.
This technology is suited to AI inference in edge devices, where compact form factors and high-bandwidth access to memory are valuable. For assembly, UMC can work with outsourced semiconductor assembly and test (OSAT) partners on wafer grinding, dicing, and other packaging processes. This partner network supports coordination across the supply chain, from technology development to mass production.
UMC 3D IC technology enables chip integration
